3D System and Wafer Reconstitution with Mid-layer Interposer

    公开(公告)号:US20240103238A1

    公开(公告)日:2024-03-28

    申请号:US18458892

    申请日:2023-08-30

    Applicant: Apple Inc.

    CPC classification number: G02B6/428 G02B6/4279 G02B6/4283 G02B6/4293

    Abstract: A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. Second package level components can be bonded to the mid-layer interposer with metal-metal bonds and optionally dielectric-dielectric bonds, while the first package level components can be bonded to the mid-layer interposer with dielectric-dielectric and optionally metal-metal bonds. Dies within the first and/or second package levels may optionally be connected with one or more optical interconnect paths.

    Structure and Method for Sealing a Silicon IC

    公开(公告)号:US20230040308A1

    公开(公告)日:2023-02-09

    申请号:US17397834

    申请日:2021-08-09

    Applicant: Apple Inc.

    Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

    Structure and method for sealing a silicon IC

    公开(公告)号:US12261132B2

    公开(公告)日:2025-03-25

    申请号:US18485709

    申请日:2023-10-12

    Applicant: Apple Inc.

    Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

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