公开(公告)号：US20040127032A1

公开(公告)日：2004-07-01

申请号：US10409985

申请日：2003-04-08

Applicant: AU Optronics Corp.

Inventor： Chia-Tien Peng ,  Ming-Wei Sun

IPC: H01L021/00 ,  H01L021/461 ,  H01L021/84

CPC classification number: H01L27/127 ,  H01L21/02052 ,  H01L27/1214

Abstract: A process for cleaning a silicon surface. First, a silicon surface is cleaned with an oxidant solution. Next, the silicon surface is rinsed with HF vapor or liquid and then with the silicon surface with hydrogen water or deionized water under megasonic agitation. Finally, the silicon surface is cleaned with an oxidant solution a second time. The present inventive cleaning process can be applied in thin film transistor (TFT) fabrication and the TFT obtained has higher electron mobility.

Abstract translation: 一种清洁硅表面的方法。 首先，用氧化剂溶液清洗硅表面。 接下来，用HF蒸汽或液体冲洗硅表面，然后在超声波搅拌下用氢水或去离子水冲洗硅表面。 最后，第二次用氧化剂溶液清洗硅表面。 本发明的清洁工艺可​​以应用于薄膜晶体管（TFT）制造中，并且所获得的TFT具有更高的电子迁移率。

公开(公告)号：US20040140468A1

公开(公告)日：2004-07-22

申请号：US10754060

申请日：2004-01-07

Applicant: AU Optronics Corp.

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L029/04

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20040106240A1

公开(公告)日：2004-06-03

申请号：US10410041

申请日：2003-04-08

Applicant: AU Optronics Corp.

Inventor： Chia-Tien Peng ,  Long-Sheng Liao ,  Yi-Chang Tsao

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: A process for forming a polysilicon layer. First, an amorphous silicon layer is formed. Next, the amorphous silicon layer is pre-treated such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer. Next, the amorphous silicon layer is crystallized to form a polysilicon layer. TFT fabricated by the present invention has smaller Vt and higher electron mobility.

Abstract translation: 一种形成多晶硅层的工艺。 首先，形成非晶硅层。 接下来，非晶硅层被预处理，使得非晶硅层的表面被氧化成氧化硅层或氮化成氮化硅层。 接下来，非晶硅层被结晶以形成多晶硅层。 通过本发明制造的TFT具有更小的Vt和更高的电子迁移率。