公开(公告)号：US5877510A

公开(公告)日：1999-03-02

申请号：US807216

申请日：1997-02-28

Applicant: Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

Inventor： Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

IPC: H01J1/34 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC classification number: H01J1/34 ,  H01J2203/0296

Abstract: There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.

Abstract translation: 在基板上设置具有小于基板的电子亲和力的阻挡层，不具有晶格弛豫并作为自旋极化电子的产生区域工作的p型应变超晶格结构和用于容纳弯曲部分的表面层 的能量带。 超晶格结构由多层构成，其中应变阱层和阻挡层交替层叠多次。 应变阱层的晶格常数大于衬底的晶格常数，并且厚度等于或小于电子波的波长，并且阻挡层的能带的能带低于应变阱层的导带， 导带中的电子可以基于隧道效应传输。 由于应变阱层中的压应力，超晶格结构的价带中的重孔带和光孔带之间的能量差异进一步扩大。