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公开(公告)号:CN101145532B
公开(公告)日:2010-06-02
申请号:CN200710166820.8
申请日:2003-12-24
Applicant: 株式会社电装
CPC classification number: G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
Abstract: 一种电镀半导体晶片同时维持所镀薄膜厚度均匀的方法,防止在晶片背面淀积并且防止在后续步骤中污染。在半导体晶片的铝电极上间接形成连接端子,在晶片背面由绝缘体覆盖的情况下进行非电解地电镀。优选的是,所述绝缘体是作为构成产品一部分的玻璃衬底。半导体型传感器展现了对腐蚀介质提高了的耐腐蚀性。在半导体衬底上,所述半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的结构部分以及电量转换元件,并且具有多个焊点,所述焊点是用于向外部单元发送检测到的电信号的输出端子,其中所述焊点利用贵重金属保护。
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公开(公告)号:CN101145532A
公开(公告)日:2008-03-19
申请号:CN200710166820.8
申请日:2003-12-24
Applicant: 株式会社电装
CPC classification number: G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
Abstract: 一种电镀半导体晶片同时维持所镀薄膜厚度均匀的方法,防止在晶片背面淀积并且防止在后续步骤中污染。在半导体晶片的铝电极上间接形成连接端子,在晶片背面由绝缘体覆盖的情况下进行非电解地电镀。优选的是,所述绝缘体是作为构成产品一部分的玻璃衬底。半导体型传感器展现了对腐蚀介质提高了的耐腐蚀性。在半导体衬底上,所述半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的结构部分以及电量转换元件,并且具有多个焊点,所述焊点是用于向外部单元发送检测到的电信号的输出端子,其中所述焊点利用贵重金属保护。
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公开(公告)号:CN100527372C
公开(公告)日:2009-08-12
申请号:CN200380100334.6
申请日:2003-12-24
Applicant: 株式会社电装
IPC: H01L21/60 , H01L21/288 , H01L21/3205 , H01L29/84 , C23C18/16
CPC classification number: G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
Abstract: 一种电镀半导体晶片同时维持所镀薄膜厚度均匀的方法,防止在晶片背面淀积并且防止在后续步骤中污染。在半导体晶片的铝电极上间接形成连接端子,在晶片背面由绝缘体覆盖的情况下进行非电解地电镀。优选的是,所述绝缘体是作为构成产品一部分的玻璃衬底。半导体型传感器展现了对腐蚀介质提高了的耐腐蚀性。在半导体衬底上,所述半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的结构部分以及电量转换元件,并且具有多个焊点,所述焊点是用于向外部单元发送检测到的电信号的输出端子,其中所述焊点利用贵重金属保护。
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公开(公告)号:CN1692484A
公开(公告)日:2005-11-02
申请号:CN200380100334.6
申请日:2003-12-24
Applicant: 株式会社电装
IPC: H01L21/60 , H01L21/288 , H01L21/3205 , H01L29/84 , C23C18/16
CPC classification number: G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
Abstract: 一种电镀半导体晶片同时维持所镀薄膜厚度均匀的方法,防止在晶片背面淀积并且防止在后续步骤中污染。在半导体晶片的铝电极上间接形成连接端子,在晶片背面由绝缘体覆盖的情况下进行非电解地电镀。优选的是,所述绝缘体是作为构成产品一部分的玻璃衬底。半导体型传感器展现了对腐蚀介质提高了的耐腐蚀性。在半导体衬底上,所述半导体型传感器具有用于检测腐蚀介质的物理量或者化学成分的结构部分以及电量转换元件,并且具有多个焊点,所述焊点是用于向外部单元发送检测到的电信号的输出端子,其中所述焊点利用贵重金属保护。
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