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公开(公告)号:CN105280657A
公开(公告)日:2016-01-27
申请号:CN201510321410.0
申请日:2015-06-12
Applicant: 株式会社东芝
IPC: H01L27/146 , H01L21/28 , H01L21/82
CPC classification number: H01L21/4853 , H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L27/14634 , H01L27/14643 , H01L2224/03462 , H01L2224/03616 , H01L2224/03831 , H01L2224/05547 , H01L2224/05557 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/08059 , H01L2224/08111 , H01L2224/08121 , H01L2224/08147 , H01L2224/80203 , H01L2224/80345 , H01L2224/80365 , H01L2224/80895 , H01L2224/80896 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/1431 , H01L2924/1434 , H01L2924/00 , H01L2924/00014
Abstract: 根据实施方式,提供一种半导体装置。半导体装置具备绝缘层、电极和槽。绝缘层设在基板的表面上。电极埋设在绝缘层中,一方的端面从绝缘层露出。槽形成在基板表面的电极的周围。此外,槽以电极的外侧面为一方的侧面,绝缘层的表面侧被开放。埋设在绝缘层中的电极其一方的端面从绝缘层的表面突出。