- 专利标题： Semiconductor device including fin structures disposed over buffer structures
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申请号： US15407856申请日： 2017-01-17
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公开(公告)号： US09997600B2公开(公告)日： 2018-06-12
- 发明人: Ka-Hing Fung , Yen-Ming Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/10 ; H01L29/161 ; H01L29/20 ; H01L29/78
摘要：
A semiconductor FET device includes a buffer structure and a fin structure. The buffer structure has a fin shape, is disposed over a substrate and extends along a first direction. The fin structure includes a channel region of the FET device, is disposed on the buffer structure and extends along the first direction. The width of the buffer structure along a second direction perpendicular to the first direction is greater than the width of the fin structure along the second direction measured at an interface between the buffer structure and the fin structure.
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