- 专利标题: Diode connected vertical transistor
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申请号: US15459574申请日: 2017-03-15
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公开(公告)号: US09953973B1公开(公告)日: 2018-04-24
- 发明人: Karthik Balakrishnan , Pouya Hashemi , Alexander Reznicek
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号: H01L27/07
- IPC分类号: H01L27/07 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L29/861
摘要:
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a vertically orientated channel. The vertical diode connected transistor device also includes a first diode source/drain region provided by an electrically conductive surface region of a substrate at a first end of the diode vertically orientated channel, and a second diode source/drain region present at a second end of the vertically orientated channel. The vertical diode also includes a diode gate structure in electrical contact with the first diode source/drain region.
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