- 专利标题: Electronics package with embedded through-connect structure and method of manufacturing thereof
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申请号: US15375771申请日: 2016-12-12
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公开(公告)号: US09953913B1公开(公告)日: 2018-04-24
- 发明人: Arun Virupaksha Gowda , Raymond Albert Fillion , Paul Alan McConnelee
- 申请人: General Electric Company
- 申请人地址: US NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Schenectady
- 代理机构: Ziolkowski Patent Solutions Group, SC
- 主分类号: H01L23/04
- IPC分类号: H01L23/04 ; H01L23/498 ; H01L23/31 ; H01L23/66 ; H01L21/48 ; H01L21/56 ; H01L23/373 ; H01L25/07 ; H01L23/00
摘要:
An electronics package includes an insulating substrate, a semiconductor device having a top surface coupled to a first side of the insulating substrate, and a pass-through component coupled to the first side of the insulating substrate. The pass-through component includes an insulating core and at least one through-hole structure comprising a conductive body extending through the thickness of the insulating core. A metallization layer is formed on a second side of the insulating substrate and extends through at least one via in the insulating substrate to electrically couple at least one conductive pad on the top surface of the semiconductor device to the at least one through-hole structure. An insulating material surrounds the semiconductor device and the insulating core of the pass-through component.
公开/授权文献
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