- 专利标题： Semiconductor structure with self-aligned wells and multiple channel materials
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申请号： US15699138申请日： 2017-09-08
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公开(公告)号： US09953872B2公开(公告)日： 2018-04-24
- 发明人: David P. Brunco
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams Morgan, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/31 ; H01L21/469 ; H01L21/8234 ; H01L21/762 ; H01L21/266 ; H01L21/02 ; H01L29/10 ; H01L29/78 ; H01L21/265 ; H01L29/165
摘要：
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.
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