- 专利标题： Lateral PiN diodes and schottky diodes
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申请号： US14476185申请日： 2014-09-03
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公开(公告)号： US09947573B2公开(公告)日： 2018-04-17
- 发明人: Natalie B. Feilchenfeld , Vibhor Jain , Qizhi Liu
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Roberts Mlotskowski Safran Cole & Calderon, P.C.
- 代理商 Anthony Canale; Andrew M. Calderon
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762 ; H01L27/08 ; H01L29/66 ; H01L29/868 ; H01L29/872 ; H01L29/165 ; H01L29/16 ; H01L29/161
摘要：
Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate.
公开/授权文献
- US20160064475A1 LATERAL PiN DIODES AND SCHOTTKY DIODES 公开/授权日：2016-03-03
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