Invention Grant
- Patent Title: Fast switching IGBT with embedded emitter shorting contacts and method for making same
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Application No.: US15168524Application Date: 2016-05-31
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Publication No.: US09941383B2Publication Date: 2018-04-10
- Inventor: Jacek Korec , John Manning Savidge Neilson , Sameer Pendharkar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/331 ; H01L29/66 ; H01L29/08 ; H01L21/02 ; H01L21/3205
Abstract:
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.
Public/Granted literature
- US20160276459A1 FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME Public/Granted day:2016-09-22
Information query
IPC分类:
