Invention Grant
- Patent Title: Contacts for highly scaled transistors
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Application No.: US15362470Application Date: 2016-11-28
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Publication No.: US09941374B2Publication Date: 2018-04-10
- Inventor: Carlos H. Diaz , Chung-Cheng Wu , Chia-Hao Chang , Chih-Hao Wang , Jean-Pierre Colinge , Chun-Hsiung Lin , Wai-Yi Lien , Ying-Keung Leung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/45 ; H01L29/786 ; H01L29/66 ; H01L29/423 ; H01L29/417 ; H01L29/775 ; H01L29/78 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532

Abstract:
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.
Public/Granted literature
- US20170077253A1 Contacts for Highly Scaled Transistors Public/Granted day:2017-03-16
Information query
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