- 专利标题： Integrated circuit device and method of manufacturing the same
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申请号： US15191562申请日： 2016-06-24
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公开(公告)号： US09899388B2公开(公告)日： 2018-02-20
- 发明人: Ki-Il Kim , Jung-gun You , Gi-gwan Park
- 申请人： Ki-Il Kim , Jung-gun You , Gi-gwan Park
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Law, PLLC
- 优先权： KR10-2015-0141047 20151007
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/092 ; H01L21/8238 ; H01L29/06
摘要：
An integrated circuit device includes a double-humped protrusion protruding from a surface of an inter-device isolation region. To manufacture the integrated circuit device, a plurality of grooves are formed in the inter-device isolation region of a substrate, a recess is formed by partially removing a surface of the substrate between the plurality of grooves, at least one fin-type active area is formed in a device region by etching the substrate in the device region and the inter-device isolation region, and the double-humped protrusion is formed from the surface of the substrate in the inter-device isolation region.
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