A method for fabricating a semiconductor device is provided. The method includes forming a gate electrode and a source or drain disposed at opposite sides of the gate electrode, forming an interlayer insulating layer covering the gate electrode and the source or drain, forming a contact hole exposing the source or drain in the interlayer insulating layer, forming a silicide layer on a bottom surface of the contact hole, and forming a spacer on sidewalls of the contact hole and an upper surface of the silicide layer.