发明授权
- 专利标题: Substrate
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申请号: US14193462申请日: 2014-02-28
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公开(公告)号: US09870969B2公开(公告)日: 2018-01-16
- 发明人: I-Tseng Lee , Yu-Ling Hsieh
- 申请人: Advanced Micro Devices (Shanghai) Co., Ltd.
- 申请人地址: CN Shanghai
- 专利权人: ADVANCED MICRO DEVICES (SHANGHAI) CO., LTD.
- 当前专利权人: ADVANCED MICRO DEVICES (SHANGHAI) CO., LTD.
- 当前专利权人地址: CN Shanghai
- 代理机构: Volpe and Koenig, P.C.
- 优先权: CN201310066146 20130301
- 主分类号: H05K1/02
- IPC分类号: H05K1/02 ; H01L23/13 ; H05K3/00 ; H05K1/03 ; H05K3/34
摘要:
The present invention relates to a substrate comprising a build-up and a solder resist layer disposed on the build-up. The solder resist layer has an upper surface facing away from the build-up. The solder resist layer has a plurality of grooves on its upper surface. The grooves of the solder resist layer can better eliminate or relieve the stress accumulated on large solder resist area induced by heat and/or material coefficient of thermal expansion mismatch of the substrate and thus can prevent and diminish warpage of the substrate or package.
公开/授权文献
- US20140246223A1 SUBSTRATE 公开/授权日:2014-09-04
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