Invention Grant
- Patent Title: Integrated circuits having source/drain structure
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Application No.: US14312871Application Date: 2014-06-24
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Publication No.: US09786780B2Publication Date: 2017-10-10
- Inventor: Shih-Hsien Huang , Yi-Fang Pai , Chien-Chang Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/41 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L29/06 ; H01L29/417 ; H01L29/165
Abstract:
An integrated circuit includes a gate structure over a substrate. A silicon-containing material structure is in each of recesses that are adjacent to the gate structure. The silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region.
Public/Granted literature
- US20140299945A1 INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE Public/Granted day:2014-10-09
Information query
IPC分类:
