发明授权
- 专利标题： Integration of bipolar transistor into complimentary metal-oxide-semiconductor process
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申请号： US15241348申请日： 2016-08-19
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公开(公告)号： US09786656B1公开(公告)日： 2017-10-10
- 发明人: Brent A. Anderson , Xuefeng Liu , Junli Wang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L27/06 ; H01L29/66 ; H01L21/8249 ; H01L29/08 ; H01L29/06 ; H01L29/165 ; H01L29/167 ; H01L21/02 ; H01L21/306 ; H01L29/45 ; H01L29/78 ; H01L29/737
摘要：
A fin heterojunction bipolar transistor (fin HBT) and a method of fabricating the fin HBT for integration with a fin complimentary metal-oxide-semiconductor (fin CMOS) into a BiCMOS fin device include forming a sub-collector layer on a substrate. The sub-collector layer includes silicon doped with arsenic (As+). A collector layer and base are patterned as fins along a first direction. An emitter layer is formed on the fins. The emitter layer is a continuous layer of epitaxially grown silicon. An oxide is deposited above the sub-collector layer, the base, and the emitter layer, and at least one contact is formed through the oxide to each of the sub-collector layer, the base, and the emitter layer.
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