A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate; a fourth step of forming a fifth insulating film and a sixth insulating film; a fifth step of depositing a first interlayer insulating film, removing the second dummy gate and the first dummy gate, forming a gate insulating film, depositing metal, and performing etch back to form a gate electrode and a gate line; a seventh step of forming a seventh insulating film; and an eighth step of forming insulating film sidewalls, forming a first epitaxially grown layer on the fin-shaped semiconductor layer, and forming a second epitaxially grown layer on the pillar-shaped semiconductor layer.