Invention Grant
- Patent Title: Semiconductor structure with active device and damaged region
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Application No.: US14521327Application Date: 2014-10-22
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Publication No.: US09780117B2Publication Date: 2017-10-03
- Inventor: Paul A. Nygaard , Michael A. Stuber
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L21/265 ; H01L21/3205 ; H01L21/84 ; H01L27/06 ; H01L29/10 ; H01L29/32 ; H01L29/47 ; H01L29/66 ; H01L29/78 ; H01L29/872
Abstract:
A semiconductor structure is formed with an active layer having an active device including a body region. The active device is formed by top side processing in and on a top side of a semiconductor on insulator wafer. A damaged region is formed within a portion of the body region by bottom side processing at a bottom side of the semiconductor on insulator wafer, the damaged region having a structure sufficient to prevent a kink effect and self-latching in operation of the active device.
Public/Granted literature
- US20160118406A1 Semiconductor Structure with Active Device and Damaged Region Public/Granted day:2016-04-28
Information query
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