A non-volatile memory system includes one or more control circuits configured to read memory cells. The reading of the programmed memory cells includes applying one or more voltages to perform boosting of a channel region associated with unselected memory cells, allowing the boosting of the channel region for a portion of time while applying the one or more voltages, preventing/interrupting the boosting of the channel region while applying the one or more voltages for a duration of time based on position of a memory cell selected for verification, applying a compare signal to the memory cell selected for reading, and performing a sensing operation for the memory cell selected for reading in response to the compare signal.