- 专利标题： Fin field effect transistor and method for fabricating the same
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申请号： US15088117申请日： 2016-04-01
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公开(公告)号： US09691766B1公开(公告)日： 2017-06-27
- 发明人: Jia-Ming Lin , Chun Che Lin , Shiu-Ko JangJian , Wei Ken Lin , Kuang Yao Lo
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234 ; H01L21/3105 ; H01L21/311 ; H01L21/3115 ; H01L29/06 ; H01L29/66
摘要：
A fin field effect transistor (FinFET) including a substrate, a plurality of insulators, and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches and include doped regions distributed therein. The gate stack partially covers the at least one semiconductor fin and the insulators. A method for fabricating the aforesaid FinFET is also discussed.
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