Invention Grant
- Patent Title: Semiconductor process
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Application No.: US13775273Application Date: 2013-02-25
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Publication No.: US09685316B2Publication Date: 2017-06-20
- Inventor: Chia Chang Hsu , Kuo-Chih Lai , Chun-Ling Lin , Bor-Shyang Liao , Pin-Hong Chen , Shu Min Huang , Min-Chung Cheng , Chi-Mao Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/02 ; H01L21/3213 ; H01L21/311 ; H01L21/768 ; H01L21/67 ; H01L21/3065 ; H01L21/285

Abstract:
A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C.
Public/Granted literature
- US20140242802A1 SEMICONDUCTOR PROCESS Public/Granted day:2014-08-28
Information query
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