- 专利标题： Method for processing a semiconductor substrate and a method for processing a semiconductor wafer
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申请号： US14541239申请日： 2014-11-14
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公开(公告)号： US09673096B2公开(公告)日： 2017-06-06
- 发明人: Joachim Hirschler , Michael Roesner , Markus Juch Heinrici , Gudrun Stranzl , Martin Mischitz , Martin Zgaga
- 申请人： INFINEON TECHNOLOGIES AG
- 申请人地址： DE Neubiberg AT Graz
- 专利权人： INFINEON TECHNOLOGIES AG,Technische Universitaet Graz
- 当前专利权人： INFINEON TECHNOLOGIES AG,Technische Universitaet Graz
- 当前专利权人地址： DE Neubiberg AT Graz
- 代理机构： Viering, Jentschura & Partner mbB
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/288 ; H01L21/3213 ; H01L21/683 ; H01L23/00
摘要：
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.
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