Invention Grant
- Patent Title: Pressure sensor device
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Application No.: US13749404Application Date: 2013-01-24
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Publication No.: US09618411B2Publication Date: 2017-04-11
- Inventor: Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Michiko Hara , Yoshihiro Higashi , Tomohiko Nagata , Akio Hori
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-198996 20120910
- Main IPC: G01L9/16
- IPC: G01L9/16 ; G01L9/00 ; G01L1/12 ; H01L41/12

Abstract:
A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.
Public/Granted literature
- US20140069200A1 PRESSURE SENSOR DEVICE Public/Granted day:2014-03-13
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