发明授权
US09593411B2 Physical vapor deposition chamber with capacitive tuning at wafer support 有权
物理气相沉积室,在晶片支持下进行电容调谐

Physical vapor deposition chamber with capacitive tuning at wafer support
摘要:
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
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