发明授权
US09593411B2 Physical vapor deposition chamber with capacitive tuning at wafer support
有权
物理气相沉积室,在晶片支持下进行电容调谐
- 专利标题: Physical vapor deposition chamber with capacitive tuning at wafer support
- 专利标题(中): 物理气相沉积室,在晶片支持下进行电容调谐
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申请号: US13614704申请日: 2012-09-13
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公开(公告)号: US09593411B2公开(公告)日: 2017-03-14
- 发明人: Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
- 申请人: Daniel J. Hoffman , Karl M. Brown , Ying Rui , John Pipitone
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboada
- 代理商 Alan Taboada
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C23C14/35 ; H01J37/32 ; H01J37/34 ; C23C14/50
摘要:
In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.
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