Invention Grant
- Patent Title: Metal oxide semiconductor devices and fabrication methods
- Patent Title (中): 金属氧化物半导体器件及其制造方法
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Application No.: US14625047Application Date: 2015-02-18
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Publication No.: US09583613B2Publication Date: 2017-02-28
- Inventor: Akira Ito , Shom Ponoth
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: BROADCOM CORPORATION
- Current Assignee: BROADCOM CORPORATION
- Current Assignee Address: US CA Irvine
- Agency: Foley & Lardner LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L21/762
Abstract:
A semiconductor device includes a first well that is disposed in a semiconductor substrate. The semiconductor device further includes a second well that is disposed in the semiconductor substrate. The semiconductor device further includes a source region, a drain region, and a gate structure between the source region and the drain region. The gate structure is disposed above the first well. The source region includes a first conducting contact above the first well and. The drain region includes a second conducting contact above the second well, the drain region being connected with the second well at least partially through a first epi region. The first epi region and the second well are configured to lower a first driving voltage applied on the source region and the drain region to a second voltage applied on the gate structure.
Public/Granted literature
- US20160211367A1 Metal Oxide Semiconductor Devices and Fabrication Methods Public/Granted day:2016-07-21
Information query
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