Invention Grant
US09582224B2 Memory control circuit unit, memory storage apparatus and data accessing method
有权
存储器控制电路单元,存储器存储装置和数据存取方法
- Patent Title: Memory control circuit unit, memory storage apparatus and data accessing method
- Patent Title (中): 存储器控制电路单元,存储器存储装置和数据存取方法
-
Application No.: US14702768Application Date: 2015-05-04
-
Publication No.: US09582224B2Publication Date: 2017-02-28
- Inventor: Wei Lin , Kuo-Hsin Lai , Tien-Ching Wang
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW104107464A 20150309
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G11C16/34

Abstract:
A memory control circuit unit including a plurality of data randomizer circuits and a data selection circuit is provided. When a first data stream is received from a host system, the first data stream is input into the data randomizer circuits to respectively output a plurality of second data streams. The data selection circuit selects one of the second data streams as a third data stream according to contents of the second data streams, and the third data stream is programmed into a rewritable non-volatile memory module. Accordingly, data written into the rewritable non-volatile memory module can be effectively disarranged.
Public/Granted literature
- US20160266791A1 MEMORY CONTROL CIRCUIT UNIT, MEMORY STORAGE APPARATUS AND DATA ACCESSING METHOD Public/Granted day:2016-09-15
Information query