发明授权
US09536900B2 Forming fins of different semiconductor materials on the same substrate
有权
在同一基板上形成不同半导体材料的翅片
- 专利标题： Forming fins of different semiconductor materials on the same substrate
- 专利标题（中）： 在同一基板上形成不同半导体材料的翅片
-
申请号： US14284820申请日： 2014-05-22
-
公开(公告)号： US09536900B2公开(公告)日： 2017-01-03
- 发明人: Ravikumar Ramachandran , Huiling Shang , Keith Tabakman , Henry K. Utomo , Reinaldo A. Vega
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman OT
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman OT
- 代理机构： Scully Scott Murphy and Presser
- 代理商 Frank Digiglio
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/12 ; H01L21/762 ; H01L29/10
摘要：
A method of manufacturing a semiconductor device, by etching a region of an SOI substrate so that only a portion of the original semiconductor is present above the insulator layer. After etching has occurred, a different semiconductor material is grown in the etched region, and fins are formed. An isolation layer is deposited to a height above that the base semiconductor of the etched region.
公开/授权文献
信息查询
IPC分类:
