- 专利标题： Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
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申请号： US14447021申请日： 2014-07-30
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公开(公告)号： US09515196B2公开(公告)日： 2016-12-06
- 发明人: Eugene A. Fitzgerald
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/02 ; H01L21/762 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/165 ; H01L29/66 ; H01L29/78
摘要：
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
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