发明授权
US09493343B2 Planar cavity MEMS and related structures, methods of manufacture and design structures
有权
平面腔MEMS及相关结构,制造方法和设计结构
- 专利标题: Planar cavity MEMS and related structures, methods of manufacture and design structures
- 专利标题(中): 平面腔MEMS及相关结构,制造方法和设计结构
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申请号: US14840453申请日: 2015-08-31
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公开(公告)号: US09493343B2公开(公告)日: 2016-11-15
- 发明人: Russell T. Herrin , Jeffrey C. Maling , Anthony K. Stamper
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- 代理商 Steven Meyers; Andrew M. Calderon
- 主分类号: H05K3/00
- IPC分类号: H05K3/00 ; B81B3/00 ; H01L41/113 ; B81C1/00 ; H01H57/00 ; G06F17/50 ; H01H1/00 ; H01H59/00
摘要:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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