Invention Grant
US09484458B2 Semiconductor device including first and second trenches having substantially equal depths
有权
半导体器件包括具有基本上相同深度的第一和第二沟槽
- Patent Title: Semiconductor device including first and second trenches having substantially equal depths
- Patent Title (中): 半导体器件包括具有基本上相同深度的第一和第二沟槽
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Application No.: US14602716Application Date: 2015-01-22
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Publication No.: US09484458B2Publication Date: 2016-11-01
- Inventor: Jin-Wook Lee , Myeong-Cheol Kim , Sang-Min Lee , Young-Ju Park , Hyung-Yong Kim , Myung-Hoon Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0095926 20101001
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/265 ; H01L21/306 ; H01L21/3065 ; H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L27/11
Abstract:
A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.
Public/Granted literature
- US20150137261A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-05-21
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