Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US14185143Application Date: 2014-02-20
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Publication No.: US09454496B2Publication Date: 2016-09-27
- Inventor: Sun-Young Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0027449 20130314
- Main IPC: G06F13/12
- IPC: G06F13/12 ; G06F13/38 ; G06F12/14 ; G06F12/10

Abstract:
A memory system is provided, which includes a real memory space and a virtual memory space. The memory system includes a memory device having a first memory space which is accessed using a first memory address and a second memory space which is accessed using a second memory address, and a memory controller configured to control access to the memory device; wherein the memory controller is configured to translate the first memory address into the second memory address mapped thereto in response to a request for access to the first memory space, access the second memory space using the translated second memory address, and access the second memory space using the non-translated second memory address, in response to a request for access to the second memory space.
Public/Granted literature
- US20140281286A1 MEMORY SYSTEM Public/Granted day:2014-09-18
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