发明授权
US09412810B2 Super-junction trench MOSFETs with closed cell layout having shielded gate
有权
具有封闭电池布局的超结沟槽MOSFET具有屏蔽栅极
- 专利标题： Super-junction trench MOSFETs with closed cell layout having shielded gate
- 专利标题（中）： 具有封闭电池布局的超结沟槽MOSFET具有屏蔽栅极
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申请号： US14592223申请日： 2015-01-08
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公开(公告)号： US09412810B2公开(公告)日： 2016-08-09
- 发明人: Fu-Yuan Hsieh
- 申请人： Force Mos Technology Co., Ltd.
- 申请人地址： TW
- 专利权人： FORCE MOS TECHNOLOGY CO., LTD.
- 当前专利权人： FORCE MOS TECHNOLOGY CO., LTD.
- 当前专利权人地址： TW
- 代理机构： Bacon & Thomas, PLLC
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/10 ; H01L29/49 ; H01L29/417 ; H01L23/535
摘要：
A super-junction trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the shielded gate disposed in the deep trench. Trenched source-body contacts are at least formed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.
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