发明授权
- 专利标题: High density interconnection of microelectronic devices
- 专利标题(中): 微电子器件的高密度互连
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申请号: US14102757申请日: 2013-12-11
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公开(公告)号: US09397071B2公开(公告)日: 2016-07-19
- 发明人: Omkar G. Karhade , John S. Guzek , Johanna M. Swan , Christopher J. Nelson , Nitin A. Deshpande , William J. Lambert , Charles A. Gealer , Feras Eid , Islam A. Salama , Kemal Aygun , Sasha N. Oster , Tyler N. Osborn
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Winkle, PLLC
- 主分类号: H05K7/00
- IPC分类号: H05K7/00 ; H01L25/00 ; H01L23/00 ; H01L25/065 ; H01L23/538 ; H05K1/18
摘要:
A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.
公开/授权文献
- US20150163904A1 HIGH DENSITY INTERCONNECTION OF MICROELECTRONIC DEVICES 公开/授权日:2015-06-11
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