发明授权
US09384970B2 Method of manufacturing semiconductor device by forming a film on a substrate 有权
通过在基板上形成膜来制造半导体器件的方法

Method of manufacturing semiconductor device by forming a film on a substrate
摘要:
Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
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