发明授权
US09384970B2 Method of manufacturing semiconductor device by forming a film on a substrate
有权
通过在基板上形成膜来制造半导体器件的方法
- 专利标题: Method of manufacturing semiconductor device by forming a film on a substrate
- 专利标题(中): 通过在基板上形成膜来制造半导体器件的方法
-
申请号: US14679128申请日: 2015-04-06
-
公开(公告)号: US09384970B2公开(公告)日: 2016-07-05
- 发明人: Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
- 申请人: Hitachi-Kokusai Electric Inc.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Brundidge & Stanger, P.C.
- 优先权: JP2008-300891 20081126; JP2009-246707 20091027
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/455 ; H01L21/314 ; H01L21/318 ; C23C16/46 ; C23C16/52 ; C23C16/50 ; C23C14/54 ; C23C28/00
摘要:
Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
公开/授权文献
信息查询
IPC分类: