发明授权
- 专利标题： Semiconductor device and method for manufacturing same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14160078申请日： 2014-01-21
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公开(公告)号： US09379216B2公开(公告)日： 2016-06-28
- 发明人: Tatsuya Nishiwaki , Yoshitaka Hokomoto , Masatoshi Arai
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： White & Case LLP
- 优先权： JP2013-057254 20130319; JP2013-232324 20131108
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/40 ; H01L29/08 ; H01L29/10
摘要：
According to an embodiment, a method for manufacturing a semiconductor device includes forming a gate trench extending into a first semiconductor layer; forming a gate insulating film on an internal wall of the gate trench; forming a polysilicon in the gate trench; etching the polysilicon into the gate trench; forming an interlayer insulating film on the polysilicon; etching the first semiconductor layer so as to project the interlayer insulating film from the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; forming a third semiconductor layer on the second semiconductor layer; forming a sidewall contacting a side face of the interlayer insulating film; forming a fourth semiconductor layer of the second conductivity type in the second semiconductor layer; and forming a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer.
公开/授权文献
- US20140284708A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日：2014-09-25
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