Invention Grant
- Patent Title: Stress compensation patterning
- Patent Title (中): 应力补偿图案
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Application No.: US13946135Application Date: 2013-07-19
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Publication No.: US09355967B2Publication Date: 2016-05-31
- Inventor: Daeik D. Kim , Je-Hsiung Lan , Mario Francisco Velez , Chengjie Zuo , Jonghae Kim , Changhan Yun
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L21/02 ; G06F17/50
Abstract:
An apparatus includes a device that includes at least one layer. The at least one layer includes an inter-device stress compensation pattern configured to reduce an amount of inter-device warpage prior to the device being detached from another device.
Public/Granted literature
- US20140374914A1 STRESS COMPENSATION PATTERNING Public/Granted day:2014-12-25
Information query
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