发明授权
- 专利标题： Manufacturing method of semiconductor device and semiconductor device
- 专利标题（中）： 半导体器件和半导体器件的制造方法
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申请号： US14750196申请日： 2015-06-25
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公开(公告)号： US09337327B2公开(公告)日： 2016-05-10
- 发明人: Koichi Arai , Masaki Hama , Yasuaki Kagotoshi , Kenichi Hisada
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly & Malur, P.C.
- 优先权： JP2014-131943 20140626
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/16 ; H01L21/02 ; H01L29/66 ; H01L29/423 ; H01L21/04
摘要：
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active region of a vertical type power MOSFET formed over an SiC substrate by opening an insulating film over the substrate by the wet etching. After a silicon oxide film having a small film thickness and a polysilicon film having a film thickness larger than the silicon oxide film are formed in sequence over an epitaxial layer, the polysilicon film is opened by a dry etching method, successively the silicon oxide film is opened by a wet etching method, and thereby the upper surface of the epitaxial layer in an active region is exposed.
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