发明授权
US09305940B2 Thin film transistor having an active pattern and a source metal pattern with taper angles
有权
具有活性图案的薄膜晶体管和具有锥角的源极金属图案
- 专利标题： Thin film transistor having an active pattern and a source metal pattern with taper angles
- 专利标题（中）： 具有活性图案的薄膜晶体管和具有锥角的源极金属图案
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申请号： US14463574申请日： 2014-08-19
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公开(公告)号： US09305940B2公开(公告)日： 2016-04-05
- 发明人: Bong-Kyun Kim , Young-Min Moon
- 申请人： Samsung Display Co., LTD.
- 申请人地址： KR
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Innovation Counsel LLP
- 优先权： KR10-2013-0137548 20131113
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/04 ; H01L29/12 ; H01L21/00 ; H01L27/12 ; H01L29/45 ; H01L21/441 ; H01L21/465 ; H01L21/467 ; H01L21/768 ; H01L21/3213 ; H01L29/417 ; H01L29/786 ; H01L21/02
摘要：
A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.
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