发明授权
- 专利标题： Power semiconductor device
- 专利标题（中）： 功率半导体器件
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申请号： US13806534申请日： 2010-06-24
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公开(公告)号： US09293572B2公开(公告)日： 2016-03-22
- 发明人: Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
- 申请人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 国际申请： PCT/JP2010/004193 WO 20100624
- 国际公布： WO2011/161721 WO 20111229
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L29/06 ; H01L21/04 ; H01L29/45
摘要：
In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.
公开/授权文献
- US20130168700A1 POWER SEMICONDUCTOR DEVICE 公开/授权日：2013-07-04
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