发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14006614申请日： 2011-03-22
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公开(公告)号： US09293405B2公开(公告)日： 2016-03-22
- 发明人: Shinji Baba , Masaki Watanabe , Muneharu Tokunaga , Kazuyuki Nakagawa
- 申请人： Shinji Baba , Masaki Watanabe , Muneharu Tokunaga , Kazuyuki Nakagawa
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Shapiro, Gabor and Rosenberger, PLLC
- 国际申请： PCT/JP2011/056801 WO 20110322
- 国际公布： WO2012/127614 WO 20120927
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/498 ; H01L21/56 ; H01L23/00
摘要：
A technique capable of improving reliability of a semiconductor device is provided. In the present invention, as a wiring board on which a semiconductor chip is mounted, a build-up wiring board is not used but a through wiring board THWB is used. In this manner, in the present invention, the through wiring board formed of only a core layer is used, so that it is not required to consider a difference in thermal expansion coefficient between a build-up layer and the core layer, and besides, it is not required either to consider the electrical disconnection of a fine via formed in the build-up layer because the build-up layer does not exist. As a result, according to the present invention, the reliability of the semiconductor device can be improved while a cost is reduced.
公开/授权文献
- US20140008798A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-01-09
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