发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US14284771申请日： 2014-05-22
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公开(公告)号： US09287390B2公开(公告)日： 2016-03-15
- 发明人: Kosei Noda , Toshinari Sasaki
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2010-181832 20100816
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/10 ; H01L29/12 ; H01L29/04 ; H01L29/66 ; H01L29/49 ; H01L29/786 ; H01L21/477
摘要：
A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.
公开/授权文献
- US20140256086A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2014-09-11
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