- 专利标题: Peeling method and method of manufacturing semiconductor device
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申请号: US14207759申请日: 2014-03-13
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公开(公告)号: US09281403B2公开(公告)日: 2016-03-08
- 发明人: Toru Takayama , Junya Maruyama , Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2001-251870 20010822
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/66 ; H01L29/786 ; B32B7/06 ; B32B43/00 ; H01L21/762 ; H01L51/00 ; G02F1/136 ; H01L21/322 ; H01L27/32 ; H01L51/52
摘要:
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
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