发明授权
- 专利标题： Patterning method for semiconductor device fabrication
- 专利标题（中）： 半导体器件制造的图案化方法
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申请号： US14729262申请日： 2015-06-03
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公开(公告)号： US09281193B2公开(公告)日： 2016-03-08
- 发明人: Yen-Chun Huang , Chih-Ming Lai , Ken-Hsien Hsieh , Ming-Feng Shieh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/033 ; H01L21/311 ; H01L21/768 ; H01L21/32 ; H01L21/3213 ; H01L23/532
摘要：
A method includes forming a first pattern having a first feature of a first material on a semiconductor substrate. A second pattern with a second feature and third feature of a second material, interposed by the first feature, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the first feature, the second feature, and the third feature. After forming the spacer elements, the second material comprising the second and third features is selectively removed to form a first opening and a second opening. The first feature, the first opening and the second opening are used as a masking element to etch the target layer.
公开/授权文献
- US20150270129A1 PATTERNING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION 公开/授权日：2015-09-24
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