Invention Grant
US09263121B2 Low power transient voltage collapse apparatus and method for a memory cell
有权
用于存储单元的低功率瞬态电压崩溃装置和方法
- Patent Title: Low power transient voltage collapse apparatus and method for a memory cell
- Patent Title (中): 用于存储单元的低功率瞬态电压崩溃装置和方法
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Application No.: US13976403Application Date: 2013-05-16
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Publication No.: US09263121B2Publication Date: 2016-02-16
- Inventor: Eric A. Karl , Yong-Gee Ng , Cyrille Dray
- Applicant: Eric A. Karl , Yong-Gee Ng , Cyrille Dray
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2013/041412 WO 20130516
- International Announcement: WO2014/185923 WO 20141120
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/419 ; G11C11/417 ; G11C11/414 ; G11C11/413
Abstract:
Described is an apparatus for memory write assist which consumes low power during write assist operation. The apparatus comprises: a power supply node; a device operable to adjust voltage on the power supply node; and a feedback unit coupled to the power supply node, the feedback unit to control the device in response to a voltage level of the voltage on the power supply node.
Public/Granted literature
- US20140340977A1 LOW POWER TRANSIENT VOLTAGE COLLAPSE APPARATUS AND METHOD FOR A MEMORY CELL Public/Granted day:2014-11-20
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