Invention Grant
- Patent Title: Three-dimensional semiconductor device
- Patent Title (中): 三维半导体器件
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Application No.: US14142158Application Date: 2013-12-27
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Publication No.: US09202570B2Publication Date: 2015-12-01
- Inventor: Sung-Min Hwang , Hansoo Kim , Woonkyung Lee , Wonseok Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0000289 20130102
- Main IPC: H01L29/40
- IPC: H01L29/40 ; G11C16/04 ; H01L29/788 ; H01L29/792 ; H01L27/115

Abstract:
A three-dimensional semiconductor device includes a substrate having a cell array region between first and second contact regions. A first stack includes a plurality of first electrodes vertically provided on the substrate, and a second stack includes a plurality of second electrodes vertically provided on the first stack. The second stack is arranged to expose end portions of the first electrodes on the first contact region and overlap end portions of the first electrodes on the second contact region.
Public/Granted literature
- US20140183756A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE Public/Granted day:2014-07-03
Information query
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