Invention Grant
US09183916B2 Electro-mechanical diode non-volatile memory cell for cross-point memory arrays
有权
用于交叉点存储器阵列的机电二极管非易失性存储单元
- Patent Title: Electro-mechanical diode non-volatile memory cell for cross-point memory arrays
- Patent Title (中): 用于交叉点存储器阵列的机电二极管非易失性存储单元
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Application No.: US14241379Application Date: 2012-09-12
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Publication No.: US09183916B2Publication Date: 2015-11-10
- Inventor: Tsu-Jae King Liu , Wookhyun Kwon
- Applicant: Tsu-Jae King Liu , Wookhyun Kwon
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Bever, Hoffman & Harms, LLP
- International Application: PCT/US2012/054931 WO 20120912
- International Announcement: WO2013/040083 WO 20130321
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/38 ; H01L27/102 ; G11C11/36 ; G11C11/50
Abstract:
A non-volatile electro-mechanical diode memory cell is described for implementation of compact (4F2) cross-point memory arrays. The electro-mechanical diode memory cells operate with relatively low set/reset voltages and excellent retention characteristics, and are multi-time programmable. Due to its simplicity, this electro-mechanical diode memory cell is attractive for implementation of three-dimensional memory arrays for higher storage density.
Public/Granted literature
- US20150016185A1 Electro-Mechanical Diode Non-Volatile Memory Cell For Cross-Point Memory Arrays Public/Granted day:2015-01-15
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