Invention Grant
US09146861B2 Memory address management method, memory controller and memory storage device
有权
内存地址管理方法,内存控制器和内存存储设备
- Patent Title: Memory address management method, memory controller and memory storage device
- Patent Title (中): 内存地址管理方法,内存控制器和内存存储设备
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Application No.: US14054852Application Date: 2013-10-16
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Publication No.: US09146861B2Publication Date: 2015-09-29
- Inventor: Hong-Lipp Ko , Teng-Chun Hsu , Po-Ting Chen , Te-Chang Tsui
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW102128526A 20130808
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
A memory address management method, a memory controller, and a memory storage device are provided. The memory address management method includes: obtaining memory information of a rewritable non-volatile memory module and formatting logical addresses according to the memory information to establish a file system, such that an allocation unit of the file system includes a lower logical programming unit and an upper logical programming unit. Here, the memory information includes a programming sequence, the allocation unit starts with the lower logical programming unit and ends with the upper logical programming unit, and an initial logical address of a data region in the file system belongs to the lower logical programming unit. Accordingly, an access bandwidth of the memory storage device is expanded.
Public/Granted literature
- US20150046632A1 MEMORY ADDRESS MANAGEMENT METHOD, MEMORY CONTROLLER AND MEMORY STORAGE DEVICE Public/Granted day:2015-02-12
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