发明授权
- 专利标题： Method of plasma processing and apparatuses using the method
- 专利标题（中）： 等离子体处理方法及使用该方法的装置
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申请号： US14021335申请日： 2013-09-09
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公开(公告)号： US09136094B2公开(公告)日： 2015-09-15
- 发明人: Jung Hyun Cho , Hyung Joon Kim , Sang Jean Jeon , Sang Heon Lee , Jeong Yun Lee , Kyung Yub Jeon , Vasily Pashkovskiy
- 申请人： Jung Hyun Cho , Hyung Joon Kim , Sang Jean Jeon , Sang Heon Lee , Jeong Yun Lee , Kyung Yub Jeon , Vasily Pashkovskiy
- 申请人地址： KR Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2013-0002807 20130110
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/3065 ; H01L21/67 ; H05H1/24
摘要：
A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.
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