Invention Grant
- Patent Title: E-fuse array circuit
- Patent Title (中): 电熔丝阵列电路
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Application No.: US14318021Application Date: 2014-06-27
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Publication No.: US09123428B2Publication Date: 2015-09-01
- Inventor: Sungju Son , Youncheul Kim , Sungho Kim , Dongue Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; G11C17/18 ; H01L23/525 ; G11C17/16 ; G11C17/00 ; G11C29/02 ; G11C29/00

Abstract:
An e-fuse array circuit includes: an e-fuse transistor of a vertical gate type configured to have a gate for receiving a voltage of a program gate line and have one between a drain terminal and a source terminal floating; and a selection transistor of a buried gate type configured to have a gate for receiving a voltage of a word line gate line and electrically connect/disconnect the other one between the drain terminal and the source terminal with a bit line.
Public/Granted literature
- US20140313842A1 E-FUSE ARRAY CIRCUIT Public/Granted day:2014-10-23
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